Friday, March 12, 2010
Thermal Management Using Heat Sinks and Effects of Heat on Electronic Circuits and Devices
0 comments Posted by blogger at 3:53 AMThe Effects of Heat on Electronic Circuits and Devices
Charles Nogales, VP of Engineering at Emulex, talks about the effects of heat on electronic circuits and devices, such as HBAs, and how heatsinks play a role in keeping networking and server product
Thermal Management Using Heat Sinks
Thermal management is an important design consideration with complex
devices running at high speeds and power levels as these devices can
generate significant heat. Proper thermal management can increase
product performance and life expectancy. The thermal management
requirements for a programmable device depend on its application.
AlteraR packages are designed to minimize thermal resistance
characteristics and maximize heat dissipation. However, in some cases,
complex designs require heat dissipation greater than packages provide.
This application note discusses ways to dissipate heat, how to calculate
the heat dissipation of a device, and how to determine if a device requires
a heat sink in an application.
Labels: Heat Sinks
Thermal Management Using Heat Sinks and Effects of Heat on Electronic Circuits and Devices
0 comments Posted by blogger at 3:53 AMThe Effects of Heat on Electronic Circuits and Devices
Charles Nogales, VP of Engineering at Emulex, talks about the effects of heat on electronic circuits and devices, such as HBAs, and how heatsinks play a role in keeping networking and server product
Thermal Management Using Heat Sinks
Thermal management is an important design consideration with complex
devices running at high speeds and power levels as these devices can
generate significant heat. Proper thermal management can increase
product performance and life expectancy. The thermal management
requirements for a programmable device depend on its application.
AlteraR packages are designed to minimize thermal resistance
characteristics and maximize heat dissipation. However, in some cases,
complex designs require heat dissipation greater than packages provide.
This application note discusses ways to dissipate heat, how to calculate
the heat dissipation of a device, and how to determine if a device requires
a heat sink in an application.
Labels: Heat Sinks
Tuesday, March 2, 2010
Based amplifier IC's offer many advantages including high efficiency, high gain, low standby current, low component count, small size and, of course, low cost. It is little wonder that audio amp IC's have replaced most discrete transistors in consumer electronic devices. While many experimenters have stayed away from these little black Mysteries, I am going to uncover some of their secrets and demonstrate how easy they are to use
Rangkaian Amplifier IC LM380
Amplifier IC LM380 comes in two flavors; LM380 and LM380-8 with output powers of 700 milli-watts and 2 watts respectively. A schematic drawing below depicts the 8th and LM380-LM380.
The LM380-8 comes in an 8-pin package and its basic circuit is virtually identical to the LM380 except for the different pin out. The LM380 comes in a 14-pin package and pins 3,4,5,10,11 and 13 are connected to ground to act as a heat sink. Experience has shown the LM380 should be soldered directly to the circuit board (no IC socket) if it is going to be operated at its full rated output of 2 watts. This IC can become quite warm and it's important to get rid of excess heat through the pins. The primary advantages of the LM380 series IC's are higher output power, very low distortion and low external parts count.
Labels: Home Amplifier, LM Amplifier
Rangkaian Amplifier V-Mosfet 100 Watt
Another design that uses the output transistor technology V-MOSFET. The transistors are we offer many advantages over a simple bipolar transistor, such as high speed, thermal stability, low distortion, etc.
The use of diodes D2 until D5 in combination with the resistances R17-19, they protect the gates of transistors v-fet from exceeds the voltage ± 14V and it creates perforation in very thin layer SiO2, that is used as insulation in the gate. This way of protection is common in all the amplifiers that use these transistors. The total gain of amplifier is 32.6, regulated from the R18, R6 and R8, in the negative feedback. Also is used enough the use of local feedback for stabilisation of operation under all the conditions. Because the transistors v-fet have positive factor of temperature, with result with the increase of temperature is increased also their resistance. This increase has as result the reduction of current that via the transistor, hence also his power. The use of separated supply in the stages of drive and exit, ensures stability and reject of distortion of intermodulation.
Series of VMOS FET POWER [ 2SK134 or 2SK135 ] [ 2SJ49 or 2SJ50 ], they are that, more above transistor they are not produced more by the Toshiba and are enough difficult they are found henceforth. They can be replaced with [ 2SK1530 in the place of 2SK135 ] and [ 2SJ201 in the place of 2SJ50 ]. The new transistors are in plastic case ΤΟ-3Ρ and no TO-3, bear in bigger supply of operation and have positive factor of temperature. This mean that with the increase of temperature, is increased and the current that is gone through from through the transistor. The new transistors him I have still not tryed and me it would interest to learn if somebody him used also with which results.
The use of diodes D2 until D5 in combination with the resistances R17-19, they protect the gates of transistors v-fet from exceeds the voltage ± 14V and it creates perforation in very thin layer SiO2, that is used as insulation in the gate. This way of protection is common in all the amplifiers that use these transistors. The total gain of amplifier is 32.6, regulated from the R18, R6 and R8, in the negative feedback. Also is used enough the use of local feedback for stabilisation of operation under all the conditions. Because the transistors v-fet have positive factor of temperature, with result with the increase of temperature is increased also their resistance. This increase has as result the reduction of current that via the transistor, hence also his power. The use of separated supply in the stages of drive and exit, ensures stability and reject of distortion of intermodulation.
Series of VMOS FET POWER [ 2SK134 or 2SK135 ] [ 2SJ49 or 2SJ50 ], they are that, more above transistor they are not produced more by the Toshiba and are enough difficult they are found henceforth. They can be replaced with [ 2SK1530 in the place of 2SK135 ] and [ 2SJ201 in the place of 2SJ50 ]. The new transistors are in plastic case ΤΟ-3Ρ and no TO-3, bear in bigger supply of operation and have positive factor of temperature. This mean that with the increase of temperature, is increased and the current that is gone through from through the transistor. The new transistors him I have still not tryed and me it would interest to learn if somebody him used also with which results.
List Componet
R1=27Kohm
R2-11=4.7Kohm
R3-4=5.6Kohm
R5=47Kohm
R6=1Kohm
R7-10-21=22Kohm
R8=12ohm
R9=1Mohm
R12=33ohm
R13-20=82ohm
R14=33ohm
R15=2.7Kohm
R16=270ohm
R17-19=680ohm
R18=33Kohm
R22-23=0.33ohm 5W
R24=8.2ohm
R25=10ohm 1W
TR1=470ohm trimmer
TR2=4.7Kohm trimmer
C1=1uF 63V mkt
C2=1nF 100V*
C3=100uF 16V
C4=100nF 100V*
C5-7=22uF 16V
C6=4.7pF ceramic
C8=47uF 16V
C9=1nF 100V*
C10-11=100uF 100V
C12-14=100nF 250V mkt
C13=150nF 100V mkt
C15=100uF 35V
D1=12V 0.5W Zener
D2.....5=8.2V 1W Zener
L1=20 turns 0.6mm on R25
Q1-2=BC 547
Q3=2N5460 fet
Q4-5=MPSA93
Q6-8-11=BC182
Q7-10=MPSA43
Q9=BC212
Q12=2SK134 or 2SK135
Q13=2SJ49 or 2SJ50
Labels: Home Amplifier, Mosfet Amplifier
Wednesday, February 10, 2010
Rangkaian Amplifier Mono 25Watt
The TDA7482 is an audio class-D amplifier assembled in Multiwatt15 package specially designed for high efficiency applications mainly for TV and Home Stereo sets. Since this chip has only mono channel, you need two pieces of this circuit for stereo application. The power supply voltage is flexible, accept (+ -)10V to (+ -)25V. This circuit needs a split supply (symmetric power supply).
TDA7482 for the main technical parameters:
- 25 W rated output power. Working conditions are: RL = 4 ~ 8 Ω, THD ≤ 10%. In fact, in accordance with the recommendation of the parameters, when RL = 8 Ω, P out = 1 W at its THD is only 0.1 percent.
- has a high output efficiency. When Vcc = ± 21V, RL = 8 Ω, P out = 18 W, the efficiency of 78 percent, so only a small work of the radiator, or even do not have to be.
- wide operating voltage range. Recommended for ± 10V ~ ± 25V, a car battery for power supply.
- are equipped with overcurrent protection devices, when RL = 0 Ω at the threshold for action to protect 3.5 A ~ 5A.
- are equipped with over-voltage protection devices, the threshold for the protection of 50 V.
- overheated overload, overheated temperature close to 150 ℃.
- ST-BY and MUTE functions.
- recommended the carrier frequency PWM operating frequency is 100 kHz ~ 200kHz.
- input noise (20 Hz ~ 20kHz) for 7 μ F ~ 12 μ F.
- input impedance for the 30 k Ω.

IC TDA7482 Pinning
TDA7482 ABSOLUTE MAXIMUM RATINGS
- DC Supply Voltage ±28 V
- Power Dissipation Tcase = 70°C 35 W
- Tj Storage and Junction Temperature –40 to 150 °C
- Maximum Voltage Across RF (pin6) 8 V
- Operating Temperature Range 0 to 70 °C
- Max ESD on Pins ±1.2 KV
Labels: TDA Amplifier
Rangkaian 170Watt Amplifier BTL
Combination of the IC LM4651 driver and the LM4652 power MOSFET provides a high efficiency power amplifier solution. The near rail-to-rail switching amplifier substantially increases the efficiency compared to Class AB amplifiers. This high efficiency solution significantly reduces the heat sink size compared to a Class AB IC of the same power level. This two-chip solution is optimum for powered subwoofers and self powered speakers.
Combination of the IC LM4651 driver and the LM4652 power MOSFET provides a high efficiency power amplifier solution. The near rail-to-rail switching amplifier substantially increases the efficiency compared to Class AB amplifiers. This high efficiency solution significantly reduces the heat sink size compared to a Class AB IC of the same power level. This two-chip solution is optimum for powered subwoofers and self powered speakers.
IC LM4651 is a integrated conventional pulse width modulator driver IC. The IC contains short circuit, under voltage, over modulation, and thermal shut down protection circuitry. The LM4651 also contains a standby function which shuts down the pulse width modulation minimizing supply current.
IC LM4652 is a fully integrated H-bridge power MOSFET IC in a TO-220 power package. The LM4652 has a temperature sensor built in to alert the LM4651 when the die temperature of the LM4652 exceeds the threshold. Together, these two IC's form a simple, compact high power audio amplifier solution complete with protection normally seen only in Class AB amplifiers. Few external components and minimal traces between the IC's keep the PCB area small and aids in EMI control.
IC LM4652 is a fully integrated H-bridge power MOSFET IC in a TO-220 power package. The LM4652 has a temperature sensor built in to alert the LM4651 when the die temperature of the LM4652 exceeds the threshold. Together, these two IC's form a simple, compact high power audio amplifier solution complete with protection normally seen only in Class AB amplifiers. Few external components and minimal traces between the IC's keep the PCB area small and aids in EMI control.
Absolute Maximum Ratings LM4651 & LM4652
- Supply Voltage ± 22V
- Output Current (LM4652) 10A
- Power Dissipation (LM4651) 1.5W
- Power Dissipation (LM4652) 32W
- ESD Susceptibility (LM4651) 2000V,
- ESD Susceptibility LM4652 (pins 2,6,10,11) 500V
- ESD Susceptibility (LM4651) (Note 5) 200V
- ESD Susceptibility LM4652 (pins 2,6,10,11) 100V
- Junction Temperature 150°C
- Soldering Information N, TA and TF Package (10 seconds) 260°C
- Storage Temperature −40°C to + 150°C
Labels: BTL Amplifier, Home Amplifier
Thursday, January 14, 2010
NOKIA 6700 Slide HARGA,SPESIFIKASI,GAMBAR

Nokia 6700 Slide REVIEW AND SPECIFICATION
With a design that’s actually quite different from the one of Nokia 6700 classic, the 6700 slide features a 2.2 inch QVGA display, Symbian UI, HSDPA and HSUPA connectivity, Bluetooth 2.1, 5MP autofocus camera, and a 2GB MicroSD card in the box.
Nokia 6700 slide will be available in no less than six color versions: pink, red, purple petrol blue, lime and aluminum. The phone’s retail price (HARGA) will be of €160 ($239).
Despite the similar name, the 6700 Slide is actually an S60 smartphone where the Classic version is not. This means that the Slide is much more capable and expandable than the Classic, although it is questionable if many customers in this market segment will actually care.
On the back is a 5 megapixel camera with autofocus, dual LED flash and Carl Zeiss optics. Video recording is up to 640 x 480 pixels at 15 frames per second. On the front is a 2.2" 240 x 320 pixel display in 16 million colours, which we think is a bit small for a phone of this type.
This is a 3.5G device with both HSDPA and HSUPA high-speed data, giving a maximum download speed of 10.2 Mbps and uploads of up to 2 Mbps. There are two tri-band WCDMA variants depending on region, and the 6700 Slide also supports quad-band GSM. In other words, the 6700 Slide should be able to deliver high-speed data in most markets worldwide.
The 6700 Slide supports microSD expandable memory (with a 2GB card in the standard sales package) and comes with Bluetooth 2.1 and USB 2.0 connectivity. Audio output is through a 2.5mm connector, which is a bit surprising seeing as most new media phones seem to have a 3.5mm one. The 6700 Slide also comes with an FM radio and of course a very decent multimedia player.
Network:
Data:GPRS+ EDGE + UMTS (3G) + HSDA
Screen:2.2" 240 x 320 pixels, 16m colours
Camera:5 megapixels
Size:
3 hours talk / 10 days standby (3G)
4 hours talk / 12 days standby (GSM)
With a design that’s actually quite different from the one of Nokia 6700 classic, the 6700 slide features a 2.2 inch QVGA display, Symbian UI, HSDPA and HSUPA connectivity, Bluetooth 2.1, 5MP autofocus camera, and a 2GB MicroSD card in the box.
Nokia 6700 slide will be available in no less than six color versions: pink, red, purple petrol blue, lime and aluminum. The phone’s retail price (HARGA) will be of €160 ($239).
Despite the similar name, the 6700 Slide is actually an S60 smartphone where the Classic version is not. This means that the Slide is much more capable and expandable than the Classic, although it is questionable if many customers in this market segment will actually care.
On the back is a 5 megapixel camera with autofocus, dual LED flash and Carl Zeiss optics. Video recording is up to 640 x 480 pixels at 15 frames per second. On the front is a 2.2" 240 x 320 pixel display in 16 million colours, which we think is a bit small for a phone of this type.
This is a 3.5G device with both HSDPA and HSUPA high-speed data, giving a maximum download speed of 10.2 Mbps and uploads of up to 2 Mbps. There are two tri-band WCDMA variants depending on region, and the 6700 Slide also supports quad-band GSM. In other words, the 6700 Slide should be able to deliver high-speed data in most markets worldwide.
The 6700 Slide supports microSD expandable memory (with a 2GB card in the standard sales package) and comes with Bluetooth 2.1 and USB 2.0 connectivity. Audio output is through a 2.5mm connector, which is a bit surprising seeing as most new media phones seem to have a 3.5mm one. The 6700 Slide also comes with an FM radio and of course a very decent multimedia player.
Network:
- GSM 850 / 900 / 1800 / 1900 +
- UMTS 900 / 1900 / 2100 or
- UMTS 850 / 1900 / 2100
Data:GPRS+ EDGE + UMTS (3G) + HSDA
Screen:2.2" 240 x 320 pixels, 16m colours
Camera:5 megapixels
Size:
- Medium slider
- 95 x 46 x 16mm / 110 grams
- Bluetooth:Yes
- Memory card:MicroSD
- Infra-red:No
- Polyphonic:Yes
- Java:Yes
- GPS:No
- OS:S60 3rd Edition, Feature Pack 2
3 hours talk / 10 days standby (3G)
4 hours talk / 12 days standby (GSM)
Labels: Nokia Slide Series
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